shantou huashan electronic devices co.,ltd . silicon controlled rectifier ? features * repetitive peak off - state voltage : 600v * r.m.s on - state current(i t(rms) =1a) * low on - state voltage (1. 2 v(ty p.)@ i tm ) ? general description sensitive triggering scr is suitable for the application where gate current limited such as small motor control, gate driver for large scr, sensing and detecting circuits. ? absolute maximum ratings ? t a =25 ?? unless otherwi se specified ? t stg ?a?a storage temperature ------------------------------------------------------ - 40~150 ?? t j ?a?a operating junction temperature --------------------------------------------------- 125 ?? v drm ?a?a repetit ive peak off - state voltage -------------------------------------------------------------------- 600v i t ? rms ? ?a?a r.m.s on - state current ? 180 o conduction angles ? ------------------------------------------ 1.0a i t(av) ?a?a average on - state current ( half sine wave : t c = 45 c ) ------------------------------------------ 0.8a i tsm ?a?a surge on - state current ( 1/2 cycle, 60hz, sine wave , non - repetitive) --- - --- ----------------- - 10a i 2 t ?a?a circuit fusing considerations( t = 8.3ms ) --------------------------------------------- -------------- 0.9 a 2 s p gm ?a?a forward peak gate power dissipation (t a =25 ?? ) ------------------------------------------------- 0.5w p g(av) ?a?a forward average gate power dissipation (t a =25 ?? ,t=8.3ms) --------------------------------- 0.1w i fgm ?a?a forward peak gat e current ------------------------------------------------------------------------------ 0.2a v rgm ?a?a reverse peak gate voltage ------------------------------------------------------------------------------- 5v h cr1c60
shantou huashan electronic devices co.,ltd . ? electrical characteristics ? t a =25 ?? unless otherwise specified ? symbol items min . typ. max. unit conditions i drm repetitive peak off - state current 10 200 u a v ak =v drm t a =25 ?? t a = 1 25 ?? v tm peak on - state voltage (1) 1.2 1.7 v i tm =1a,peak i gt gate trigger current ? 2 ? 200 500 ua v ak =6v(dc), r l =100 ohm t a =25 ?? t a = - 40 ?? v gt gate tri gger voltage (2) 0.8 1.2 v v ak =6v(dc), r l =100 ohm t a =25 ?? t a = - 40 ?? v gd non - trigger gate voltage 0.2 v v ak =12v, r l =100 ohm t a = 1 25 ?? i h holding current 2.0 5.0 10 ma i t=100ma, gate open, t a =25 ?? t a = - 40 ?? rth(j - c) thermal resistance 50 ?? /w jun ction to case rth(j - a) thermal resistance 160 ?? /w junction to ambient dv/dt critical rate of rise off - state voltage 200 v/ s v d =v drm 67% exponential waveform rjk=1kohm tj=125 ?? 1. forward current applied for 1 ms maximum duration,duty cycle ? 1%. 2. r gk current is not included in measurement. ? performance curves figure 1 ? gate characteristics figure 2 ? maximum casetemperture gate cu rrent (ma) average on - state current (ma) h cr1c60 gate voltage (v) max. allowable case temperture ( c)
shantou huashan electronic devices co.,ltd . figure 3 - typical forward voltage(v) figure 4 - thermal response on - state voltage (v) time (sec) figure 5 - typical gate trigger voltage vs figure 6 - typical gate trigger current vs junction temperature junction temperature junction temperature ( c) junction temperature ( c) figure 7 - typical holding current figure 8 - power dissipation junction temperature ( c) average on - state current (a) h cr 1c60 on - state current(a) transient thermal imperdance ( c) max. average power dissipation (w) holding current (ma)
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